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Toshiba MG300H1FL1 Power Bipolar Transistor Module 300A
Toshiba MG300H1FL1 Power Bipolar Transistor Module 300A

Toshiba MG300H1FL1 Power Bipolar Transistor Module 300A

Toshiba MG300H1FL1 silicon NPN triple diffused power bipolar transistor module rated 300A collector current with built-in freewheeling diode. Designed for high-power switching and motor control applications. Genuine Toshiba product with 1-year warranty and fast shipping.
Price: $58.00 $56.00 / piece
Quantity: Unit(s)     MOQ: 1
 
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MG300H1FL1 Summary
The Toshiba MG300H1FL1 is a high-power silicon NPN triple diffused bipolar transistor module rated at 300A collector current. Featuring built-in freewheeling diode, isolated collector from case, and high DC current gain (hFE=80 min at IC=300A), this module delivers reliable performance in demanding motor control and high-power switching environments. Trusted by industrial engineers worldwide.
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